Optimizing PECVD a-SiC:H Films for Neural Interface Passivation
نویسندگان
چکیده
This work aims to optimize Plasma-Enhanced Chemical Vapour Deposition (PECVD) amorphous hydrogenated silicon carbide (a-SiC:H) as a conformal passivation layer for invasive microelectrode array (MEA) neural interface applications. By carefully tuning the PECVD deposition parameters, composition, structure, electrical, and mechanical properties of films can be optimized high resistivity, low stress, great resistance chemical attack. optimization will eventually allow a-SiC:H used an ideal insulation, protection thin biocompatible all-SiC interfaces.
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ژورنال
عنوان ژورنال: Key Engineering Materials
سال: 2023
ISSN: ['1662-9809', '1013-9826', '1662-9795']
DOI: https://doi.org/10.4028/p-762f40